Control of Al2O3/InAlN interface by two-step atomic layer deposition combined with high-temperature annealing
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference31 articles.
1. Power electronics on InAlN/(In)GaN: Prospect for a record performance
2. Optical properties and electronic structure of InN and In-rich group III-nitride alloys
3. High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
4. Fabrication of an InAlN/AlGaN/AlN/GaN Heterostructure with a Flat Surface and High Electron Mobility
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Oxidation Behavior of InAlN during Rapid Thermal Annealing;physica status solidi (a);2021-08-16
2. Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process;IEEE Electron Device Letters;2019-02
3. Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3;Applied Physics Express;2017-05-11
4. Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature;Chinese Physics B;2016-03
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