An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure-Reference-Cited by-同舟云学术

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An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

Published:2006-06 Issue:6 Volume:3 Page:2261-2264
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Marso M.,Fox A.,Heidelberger G.,Bernát J.,Lüth H.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference7 articles.

1. Electrical behaviour of the based MSM-2DEG diode

2. , , , , , and , Proc. 9th Int. Conf. Indium Phosphide and Related Materials, Hyannis, Massachusetts, USA, 1997, pp. 494–497.

3. AlGaN/GaN varactor diode for integration in HEMT circuits

4. , , , , and , Proc. 4th Intern. Conf. Advanced Semicond. Dev. & Microsystems, 2002, pp. 295–298; ISBN: 0-7803-7276-X.

5. AlGaN-Based Bragg Reflectors

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