Recessed AlGaN/GaN UV Phototransistor-Reference-Cited by-同舟云学术

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Recessed AlGaN/GaN UV Phototransistor

Published:2019-04-30 Issue:2 Volume:19 Page:184-189
ISSN:1598-1657
Container-title:JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
language:en
Short-container-title:JSTS

Author:

Jang Won-Ho,Kim Hyun-Seop,Kang Myoung-Jin,Cho Chun-Hyung,Cha Ho-Young

Publisher

The Institute of Electronics Engineers of Korea

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale Raman mapping of elastic stresses in multilayer heterostructure based on multi-period GaN/AlN superlattices grown using HVPE technology on hybrid SiC/Si substrate;Optical Materials;2024-04

2. Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors;Micromachines;2022-12-13

3. Comparative study of nanostructured ultra-thin AlGaN/GaN heterostructures grown on hybrid compliant SiC/porSi substrates by molecular beam epitaxy with plasma nitrogen activation;Optical Materials;2022-06

4. MicroRaman Study of Nanostructured Ultra-Thin AlGaN/GaN Thin Films Grown on Hybrid Compliant SiC/Por-Si Substrates;Coatings;2022-05-03

5. Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor;Scientific Reports;2021-03-30

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