Investigation of AlGaN/GaN HEMTs on Si Substrate Using Backgating
Author:
Affiliation:
1. Institute of Thin Films and Interfaces, Research Centre Jülich, 52425 Jülich, Germany
2. AIXTRON AG, Kackertstrasse 15–17, 52072 Aachen, Germany
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390118
Reference7 articles.
1. AlGaN∕GaN HEMTs on silicon substrates with fT of 32∕20 GHz and fmax of 27∕22 GHz for 0.5∕0.7 m gate length
2. Backgating and light sensitivity in ion-implanted GaAs integrated circuits
3. An analytical model for the photodetection mechanisms in high-electron mobility transistors
4. AlGaN/GaN HEMTs on (111) silicon substrates
5. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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