Fabrication of GaN-based striped structures along the <110> direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage-Reference-Cited by-同舟云学术

Fabrication of GaN-based striped structures along the <110> direction by the combination of RIE dry-etching and KOH wet-etching techniques to recover dry-etching damage

Published:2006-06 Issue:6 Volume:3 Page:1624-1628
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Itoh Morimichi,Kinoshita Toru,Kawasaki Koji,Takeuchi Misaichi,Koike Choshiro,Aoyagi Yoshinobu

Publisher

Wiley

Subject

Condensed Matter Physics

Reference15 articles.

1. 10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes

2. 30-GHz-band over 5-W power performance of short-channel AlGaN/GaN heterojunction FETs

3. Nitride Semiconductors and Devices (Springer, Heidelberg, 1999)

4. Evolution of surface roughness of AlN and GaN induced by inductively coupled Cl2/Ar plasma etching

5. High-density plasma etch selectivity for the III–V nitrides

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