Author:
Shul R.J,Willison C.G,Bridges M.M,Han J,Lee J.W,Pearton S.J,Abernathy C.R,MacKenzie J.D,Donovan S.M
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Pearton, S. J. and Shul, R. J., in Gallium Nitride I, ed. J. I. Pankove and T. D. Moustakas. Academic Press, San Diego, 1998
2. Harrison, W. A., Electronic Structure and Properties of Solids. Freeman, San Francisco, 1980
3. Reactive ion etching of GaN using BCl3
4. High temperature electron cyclotron resonance etching of GaN, InN, and AlN
5. Electron cyclotron resonance etching characteristics of GaN in SiCl4/Ar
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