Recent progress in growth and physics of GaN/AlN quantum dots-Reference-Cited by-同舟云学术

Recent progress in growth and physics of GaN/AlN quantum dots

Published:2004-04 Issue:6 Volume:1 Page:1445-1450
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Gogneau N.¹,Enjalbert F.²,Fossard F.¹,Hori Y.¹,Adelmann C.¹,Brault J.¹,Martinez‐Guerrero E.¹,Simon J.¹,Bellet‐Amalric E.¹,Jalabert D.¹,Pelekanos N.¹,Rouvière J.‐L.¹,Daudin B.¹,Si Dang Le²,Mariette H.²,Monroy E.¹

Affiliation:

1. CEA‐CNRS‐UJF Group Nanophysics and Semiconductors, CEA/DRFMC/SP2M, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

2. CEA‐CNRS‐UJF Group Nanophysics and Semiconductors, Laboratoire Spectrométrie Physique (CNRS UMR 5588), Université J. Fourier‐Grenoble, BP 87, 38402 Saint Martin d'Heres Cedex, France

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304083

Reference13 articles.

1. Proceedings of the International Conference on Semiconductor Quantum Dots (QD 2000) Munich Germany (July 31–August 3 2000) edited by U. Woggon and A. Zrenner phys. stat. sol. (b)224 1–3 (2001).

2. Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN

3. Dynamically stable gallium surface coverages during plasma-assisted molecular-beam epitaxy of (0001) GaN

4. Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN

5. From visible to white light emission by GaN quantum dots on Si(111) substrate

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