Theoretical investigations on the growth mode of GaN thin films on an AlN(0001) substrate
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab06b1/pdf
Reference40 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
3. Influence of dislocations on photoluminescence of InGaN∕GaN multiple quantum wells
4. Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
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