Structure of GaN quantum dots grown under “modified Stranski–Krastanow” conditions on AlN
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1592866
Reference38 articles.
1. Surfactant effect of gallium during molecular-beam epitaxy of GaN on AlN (0001)
2. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
3. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
4. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
5. InP islands on InGaP/GaAs(001): island separation distributions
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