Enhancement of external quantum efficiency in GaN-based light emitting diodes using a suspended geometry
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference12 articles.
1. Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures
2. Light-Emitting Diodes (Cambridge University Press, Cambridge, 2003), p. 89.
3. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
4. Highly efficient GaN-based light emitting diodes with micropits
5. 30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
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4. High light extraction efficiency light-emitting diodes grown on bulk GaN and sapphire substrates using vertical transparent package;Conference on Lasers and Electro-Optics 2012;2012
5. Extraction Efficiency Improvement of GaN Light-emitting Diode Using Sub-wavelength Nanoimprinted Patterns on Sapphire Substrate;CLEO:2011 - Laser Applications to Photonic Applications;2011
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