Highly efficient GaN-based light emitting diodes with micropits
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2402219
Reference28 articles.
1. Solid-State Light Sources Getting Smart
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
4. GaN Growth Using GaN Buffer Layer
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates;Advanced Photonics Research;2023-01-20
2. Effect of Barrier Temperature on Photoelectric Properties of GaN-Based Yellow LEDs*;Chinese Physics Letters;2020-03-01
3. Study on Carrier transportation in InGaN based green LEDs with V-pits structure in the active region;Optical Materials;2018-12
4. Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes;Applied Physics Letters;2014-06-02
5. Preparing nano-hole arrays by using porous anodic aluminum oxide nano-structural masks for the enhanced emission from InGaN/GaN blue light-emitting diodes;Advances in Natural Sciences: Nanoscience and Nanotechnology;2012-12-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3