Determination of carrier diffusion length in MOCVD-grown GaN epilayers on sapphire by optical techniques
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference9 articles.
1. Carrier diffusion length measured by optical method in GaN epilayers grown by MOCVD on sapphire substrates
2. Semiconductor Optics (Springer-Verlag, Berlin/Heidelberg/NY, 1997), pp. 422–429.
3. Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique
4. Optical properties of wurtzite structure GaN on sapphire around fundamental absorption edge (0.78–4.77 eV) by spectroscopic ellipsometry and the optical transmission method
5. Acoustic Crystals, Handbook, edited by M. P. Shaskolskaya (Nauka, Moscow, 1982), p. 632 (in Russian).
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