Heteroepitaxial InSb films grown via Si(111)-√7×√3-In surface reconstruction
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference12 articles.
1. Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy
2. Transport properties of InSb and InAs thin films on GaAs substrates
3. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications
4. In(4× 3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si(001) Substrate
5. Adsorption of Sb on the In-induced surface reconstructions of Si(001) and Si(111) surfaces
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1. Influence of Composition Ratio of In and Ga Atoms of InGaSb Bi-layer on Growth of InGaSb Thin Films on Si(111) Substrate;e-Journal of Surface Science and Nanotechnology;2022-12-08
2. Fabrication and Investigation of InSb Thin Films for IR SAW Photodetectors;Springer Proceedings in Materials;2020
3. Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy;Japanese Journal of Applied Physics;2012-02-20
4. Effects of Initial In Coverage for Preparation of InSb Bilayer on Electrical Properties of InSb Films Grown By Surface Reconstruction Controlled Epitaxy;Japanese Journal of Applied Physics;2012-02-01
5. Effects of Deposition Conditions of First InSb Layer on Electrical Properties of n-Type InSb Films Grown With Two-Step Growth Method via InSb Bilayer;Japanese Journal of Applied Physics;2011-04-20
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