Effect of the low-temperature buffer thickness on quality of InSb grown on GaAs substrate by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Growth of high-quality InSb films on Si(111) substrates without buffer layers
2. Heteroepitaxial growth of InSb films on a Si(0 0 1) substrate via AlSb buffer layer
3. High-mobility InSb thin films on GaAs (001) substrate grown by the two-step growth process
4. Growth of InSb on GaAs using InAlSb buffer layers
5. Growth and characterisation of InSb/GaAs grown using molecular beam epitaxy
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3. Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers*;Chinese Physics B;2021-03-01
4. MBE growth of high quality InAsSb thin films on GaAs substrates with GaSb as buffer layers;Journal of Crystal Growth;2020-07
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