Electronic and optical properties of [N11] grown nanostructures
Author:
Affiliation:
1. Dept. of Electronic Engineering, University of Rome “Tor Vergata”, via del Politecnico, 1, 00133 Rome, Italy
2. Walter Schottky Institute and Physics Department, Technical University of Munich, 85748 Garching, Germany
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304095
Reference38 articles.
1. Self-organized InGaAs quantum dots grown by molecular beam epitaxy on (100), , , , , and oriented GaAs
2. Piezoelectric-induced quantum-confined Stark effect in self-assembled InAs quantum dots grown on (N11) GaAs substrates
3. Changes in luminescence intensities and carrier dynamics induced by proton irradiation inInxGa1−xAs/GaAsquantum dots
4. Wavelength tuning of InAs quantum dots grown on (311)B InP
5. Electronic structure of strainedInP/Ga0.51In0.49Pquantum dots
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