Self-organized InGaAs quantum dots grown by molecular beam epitaxy on (100), , , , , and oriented GaAs
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
2. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices
3. Direct formation of quantum‐sized dots from uniform coherent islands of InGaAs on GaAs surfaces
4. Structural and optical properties of self-assembled InGaAs quantum dots
5. Time‐resolved optical characterization of InGaAs/GaAs quantum dots
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1. Structural Characteristics of Epitaxial Low-Temperature Grown {InGaAs/InAlAs} Superlattices on InP(100) and InP(111)A Substrates;Crystallography Reports;2020-05
2. Growth of InAs Quantum Dots on GaAs (511)A Substrates: The Competition between Thermal Dynamics and Kinetics;Small;2016-06-27
3. InxGa1−xAs quantum wire network-like and ordered checker board-like nanostructures on GaAs (311) by low In composition multi-layer stacking;physica status solidi (a);2010-11-15
4. InGaAs quantum dots grown on B-type high index GaAs substrates: surface morphologies and optical properties;Nanotechnology;2006-05-16
5. GaAs(111)A/B surface orientation effects on electron density in normal and inverted pseudomorphic HEMTs;Applied Physics A;2005-06
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