Low‐frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate‐temperature buffer layers-Reference-Cited by-同舟云学术

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Low‐frequency noise characterizations on Ni/GaN Schottky diodes deposited on intermediate‐temperature buffer layers

Published:2003-11-24 Issue:7 Volume: Page:2396-2399
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Fong W. K.¹,Leung B. H.¹,Surya C.¹,Lu L. W.²,Ge W. K.³

Affiliation:

1. Department of Electronic and Information Engineering and Photonics Research Center, The Hong Kong Polytechnic University, Hong Kong SAR, China

2. Laboratory of Semiconductor for Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

3. Department of Physics, The Hong Kong University of Science and Technology, Hong Kong SAR, China

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303393

Reference15 articles.

1. High-mobility GaN epilayer grown by RF plasma-assisted molecular beam epitaxy on intermediate-temperature GaN buffer layer

2. Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates

3. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

4. GaN Growth Using GaN Buffer Layer

5. Characterization of high-quality MBE-grown GaN films on intermediate-temperature buffer layers

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