Comparison of deep level incorporation in ammonia and rf-plasma assisted molecular beam epitaxy n-GaN films
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference10 articles.
1. Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE
2. Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy
3. Impact of carbon on trap states in n-type GaN grown by metalorganic chemical vapor deposition
4. Hydrogen passivation of deep levels in n–GaN
5. Gallium vacancies and the yellow luminescence in GaN
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