Movement and pinning of dislocations in SiC
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference20 articles.
1. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
2. Investigation of Electroluminescence across 4H-SiC p+/n-/n+ Structures Using Optical Emission Microscopy
3. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
4. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
5. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions
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1. Polarized Photoluminescence from Partial Dislocations in 4H-SiC;Materials Science Forum;2014-02
2. Polarization of Photoluminescence from Partial Dislocations in 4H-SiC;Applied Physics Express;2013-01-01
3. Structural Analysis of Dislocations in Highly Nitrogen-Doped 4H-SiC Substrates;Materials Science Forum;2010-04
4. Modeling nonlinear electromechanical behavior of shocked silicon carbide;Journal of Applied Physics;2010-01
5. Multi-phonon capture of charge carriers by dislocation kinks in semiconductors;Journal of Physics and Chemistry of Solids;2008-11
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