Multi-phonon capture of charge carriers by dislocation kinks in semiconductors-Reference-Cited by-同舟云学术

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Multi-phonon capture of charge carriers by dislocation kinks in semiconductors

Published:2008-11 Issue:11 Volume:69 Page:2785-2790
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Vardanyan Armen S.,Vardanyan Robert A.,Kteyan Armen A.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference27 articles.

1. Dislocation Dynamics and Plasticity;Suzuki,1991

2. Structure and motion of basal dislocations in silicon carbide;Blumenau;Phys. Rev. B,2003

3. Structure and energy of partial dislocations in Wurtzite-GaN;Savini;Phys. Status Solidi (c),2007

4. Glide of partial dislocations in silicon;Heggie;J. Phys.,1983

5. Luminescence of semiconductors containing charged dislocations;Vardanyan;Sov. Phys. Solid State,1982

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. STOCHASTIC DYNAMICS OF DC AND AC DRIVEN DISLOCATION KINKS;International Journal of Modern Physics B;2012-12-20

2. Dynamics of dislocation kink in the pinning center potential under influence of external forces;Journal of Contemporary Physics (Armenian Academy of Sciences);2009-01-08

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