Structure and motion of basal dislocations in silicon carbide
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.68.174108/fulltext
Reference49 articles.
1. A 4.5 kV 6H silicon carbide rectifier
2. Recombination-enhanced extension of stacking faults in 4H-SiC p-i-n diodes under forward bias
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