Polarization of Photoluminescence from Partial Dislocations in 4H-SiC
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/6/i=1/a=011301/pdf
Reference24 articles.
1. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
2. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
3. Dislocation evolution in 4H-SiC epitaxial layers
4. Core structure and properties of partial dislocations in silicon carbide p-i-n diodes
5. Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes
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1. Single Shockley stacking fault expansion from immobile basal plane dislocations in 4H-SiC;Japanese Journal of Applied Physics;2020-12-09
2. Defect engineering in SiC technology for high-voltage power devices;Applied Physics Express;2020-11-26
3. Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC Epilayers;Materials Science Forum;2020-07
4. Crystal Lattice Defects as Natural Light Emitting Nanostructures in Semiconductors;Springer Series in Chemical Physics;2019
5. Observation of carrier recombination in single Shockley stacking faults and at partial dislocations in 4H-SiC;Journal of Applied Physics;2018-09-07
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