Properties of MBE Cd x Hg 1− x Te/GaAs structures modified by ion‐beam milling-Reference-Cited by-同舟云学术

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Properties of MBE Cd x Hg 1− x Te/GaAs structures modified by ion‐beam milling

Published:2004-01-19 Issue:2 Volume:1 Page:355-359
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Bogoboyashchyy V. V.¹,Dvoretsky S. A.²,Izhnin I. I.³,Mikhailov N. N.²,Sidorov Yu. G.²,Sizov F. F.⁴,Varavin V. S.²,Yudenkov V. A.³

Affiliation:

1. Kremenchuk State Polytechnical University, 20 Pershotravneva St., 39614 Kremenchuk, Ukraine

2. Institute of Semiconductor Physics, SB RAS, 13 Lavrentieva Av., 630090 Novosibirsk, Russia

3. R & D Institute for Materials SRC “Carat”, 202 Stryjska St., 79031 Lviv, Ukraine

4. Institute of Semiconductor Physics, NASU, 45 Nauki Av., 03028 Kiev, Ukraine

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303947

Reference15 articles.

1. J. T. M.Wotherspoon UK Patent No. GB 2095898 1981.

2. Dynamics of native point defects in H2 and Ar plasma-etched narrow gap (HgCd)Te

3. Hg1-xCdxTe doping by ion-beam treatment

4. Deep p-n junction in Hg1-xCdxTe created by ion milling

5. p-to-n ion-beam milling conversion in specially doped Cd<formula><inf><roman>x</roman></inf></formula>Hg<formula><inf><roman>1-x</roman></inf></formula>Te

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