Dynamics of native point defects in H2 and Ar plasma-etched narrow gap (HgCd)Te
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
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2. Type conversion of p-(HgCd)Te using and Ar reactive ion etching
3. Ion beam milling effect on electrical properties of Hg1−xCdxTe
4. Hg1-xCdxTe doping by ion-beam treatment
5. J.F. Siliquini, J.M. Dell, C.A. Musca, L. Faraone, J. Piotrowski, J. Crystal Growth 184/185 (1998) 1219.
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