Characterisation of reactive-ion-etching-induced type-conversion in p-type HgCdTe using scanning laser microscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Stoichiometric dry etching of mercury cadmium telluride using a secondary afterglow reactor
2. Type conversion of p-(HgCd)Te using and Ar reactive ion etching
3. Determination of the migration energy of Hg interstitials in (HgCd)Te from ion milling experiments
4. Spatially resolved characterization of HgCdTe materials and devices by scanning laser microscopy
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1. A review on plasma-etch-process induced damage of HgCdTe;Infrared Physics & Technology;2018-05
2. Ion etching of HgCdTe: Properties, patterns and use as a method for defect studies;Opto-Electronics Review;2017-06
3. Dry etched SiO2 Mask for HgCdTe Etching Process;Journal of Electronic Materials;2016-04-12
4. Depth Profiling of Electronic Transport Parameters in n-on-p Boron-Ion-Implanted Vacancy-Doped HgCdTe;Journal of Electronic Materials;2013-07-11
5. On conductivity type conversion of p-type silicon exposed to a low-frequency inductively coupled plasma of Ar + H2;Journal of Physics D: Applied Physics;2010-12-01
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