Radiation‐induced defects and their transformations in oxygen‐rich germanium crystals-Reference-Cited by-同舟云学术

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Radiation‐induced defects and their transformations in oxygen‐rich germanium crystals

Published:2003-01-27 Issue:2 Volume: Page:702-706
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Markevich V. P.¹²,Litvinov V. V.³,Dobaczewski L.⁴,Lindström J. L.⁵,Murin L. I.²,Peaker A. R.¹

Affiliation:

1. Centre for Electronic Materials, UMIST, Sackville Street, Manchester M60 1QD, UK

2. Institute of Solid State and Semiconductor Physics, P. Brovki str. 17, 220072 Minsk, Belarus

3. Belarusian State University, 4 F. Scoriny av., 220050 Minsk, Belarus

4. Institute of Physics, Polish Academy of Sciences, al. Lotnikov 32/46, 03‐668, Warsaw, Poland

5. Lund University, Division of Solid State Physics, 221 00 Lund, Sweden

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306214

Reference13 articles.

1. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-ACenter

2. EVIDENCE FOR LOW‐TEMPERATURE MOTION OF VACANCIES IN GERMANIUM

3. Oxygen-Related Defects in Irradiated Germanium

4. Study of irradiation‐induced defects in germanium

5. Irradiation-induced defects in Ge studied by transient spectroscopies

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study;Physica B: Condensed Matter;2009-12

2. Defects and Diffusion in SiGe and Strained Si;SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices;2007-12-13

3. Local-density-functional calculations of the vacancy-oxygen center in Ge;Physical Review B;2007-03-30

4. Radiation Performance of Ge Technologies;Germanium-Based Technologies;2007

5. Oxygen in Germanium;Germanium-Based Technologies;2007

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