1. GD Watkins. EPR studies of the lattice vacancy and low-temperature damage processes in silicon. Lattice Defects in Semiconductors 1974, edited by FA Huntley. Inst. Phys. Conf. Ser. No 23, IOP,Bristol, 1975, pp1-22.
2. GD Watkins. The lattice vacancy in silicon. Deep Centers in Semiconductors, ST Pantelides (ed.). Gordon and Breach, New York, 1986, chapter 3, pp147-183.
3. GD Watkins. Vacancies and interstitials and their interactions with impurities in c-Si. Properties of Crystalline Silicon (EMIS Data Review Series No. 20), R. Hull (ed.), INSPEC, London, 1999, chapter 11.1, pp.643-652.
4. Point defects and dopant diffusion in silicon
5. Deep-level transient spectroscopy of the Ge-vacancy pair in Ge-dopedn-type silicon