Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study-Reference-Cited by-同舟云学术

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Interstitial-related defect reactions in electron-irradiated oxygen-rich Ge crystals: A DLTS study

Published:2009-12 Issue:23-24 Volume:404 Page:4533-4536
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Markevich V.P.,Peaker A.R.,Lastovskii S.B.,Murin L.I.,Litvinov V.V.,Emtsev V.V.,Dobaczewski L.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Point defects in germanium: Reliable and questionable data in radiation experiments

2. Vacancies and Self-Interstitials in Germanium Observed by Perturbed Angular Correlation Spectroscopy

3. Low-temperature irradiation-induced defects in germanium:In situanalysis

4. Complexes of self-interstitials with oxygen atoms in germanium

5. Interaction of self-interstitials with oxygen-related defects in electron-irradiated Ge crystals

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation-induced electron and hole traps in Ge1 − xSnx (x = 0–0.094);Journal of Applied Physics;2020-02-14

2. Growth and applications of GeSn-related group-IV semiconductor materials;Science and Technology of Advanced Materials;2015-07-16

3. (Invited) Challenges and Opportunities for Doping Control in Ge for Micro and Optoelectronics Applications;ECS Transactions;2013-03-15

4. Role of point defects on B diffusion in Ge;Materials Science in Semiconductor Processing;2012-12

5. Self-interstitials injection in crystalline Ge induced by GeO2nanoclusters;Physical Review B;2011-07-05

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