Migration enhanced MOCVD (MEMOCVD TM ) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate-Reference-Cited by-同舟云学术

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Migration enhanced MOCVD (MEMOCVD TM ) buffers for increased carrier lifetime in GaN and AlGaN epilayers on sapphire and SiC substrate

Published:2005-04-11 Issue:7 Volume:2 Page:2095-2098
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Qhalid Fareed R. S.¹,Zhang J. P.¹,Gaska R.¹,Tamulaitis G.²,Mickevicius J.³,Aleksiejunas R.³,Shur M. S.³,Khan M. A.⁴

Affiliation:

1. Sensor Electronic Technology, Inc., Columbia, SC 29209, USA

2. MTMI, Vilnius University, Vilnius, Lithuania

3. ECSE and Broadband Center, Renssaeler Polytechnic Institute, Troy NY 12180, USA

4. Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461531

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