The role of transient surface morphology on composition control in AlGaN layers and wells
Author:
Affiliation:
1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7907, USA
2. Adroit Materials, Inc., 2054 Kildaire Farm Road, Suite 205, Cary, North Carolina 27518, USA
Funder
National Science Foundation
U.S. Department of Energy
Office of Naval Research Global
Army Research Office
Air Force Office of Scientific Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5063933
Reference36 articles.
1. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
2. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
3. Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications
4. AlGaN/GaN quantum well ultraviolet light emitting diodes
5. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
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1. Pseudomorphic growth of a thin-GaN layer on the AlN single-crystal substrate using metal organic vapor phase epitaxy;Japanese Journal of Applied Physics;2024-06-03
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3. AlN interlayer-induced reduction of dislocation density in the AlGaN epilayer;CrystEngComm;2024
4. Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs;Applied Physics Letters;2023-11-27
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