Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference7 articles.
1. Playing with Polarity
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3. Self-powered ultraviolet photodiode based on lateral polarity structure GaN films;Journal of Vacuum Science & Technology B;2021-09
4. Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes;Journal of Electronic Materials;2021-04-15
5. Cathodoluminescence spatially resolves optical transitions in thick group-III and N-polar InGaN films;Journal of Applied Physics;2020-11-07
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