Current-voltage characteristics of n∕n lateral polarity junctions in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2244046
Reference8 articles.
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3. Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
4. M. Stutzman, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober, Proceedings of the ICNS 4 Conference, Denver, CO, 2001, p. 505.
5. Infrared studies on GaN single crystals and homoepitaxial layers
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