Correlation of Optical Emission and Ion Flux with GaN Etch Rate in Inductively Coupled Ar/Cl 2 Plasma Etching-Reference-Cited by-同舟云学术

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Correlation of Optical Emission and Ion Flux with GaN Etch Rate in Inductively Coupled Ar/Cl 2 Plasma Etching

Published:2002-12-19 Issue:1 Volume: Page:112-115
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Rizvi S.A.¹,Maguire P.D.¹,Mahony C.M.O.¹,Okpalugo O.A.¹,Corr C.S.²,Graham W.G.²,Morley S.M.¹

Affiliation:

1. NIBEC, School of Electrical and Mechanical Engineering, University of Ulster, Northern Ireland, U.K.

2. Department of Physics, Queens University, Belfast, Northern Ireland, U.K.

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390002

Reference10 articles.

1. In Situ Monitoring of GaN Reactive Ion Etching by Optical Emission Spectroscopy

2. GaN Etching in BCl3/Cl2 Plasmas

3. Characterization of high density CH4/H2/Ar plasmas for compound semiconductor etching

4. A novel electrostatic probe method for ion flux measurements

5. R.W.B.PearseandA.G.Gaydon The Identification of Molecular Spectra 4th ed. Chapman and Hall London 1976.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical characterization of radio frequency discharges;Plasma Sources Science and Technology;2005-05-01

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