Characterization of high density CH4/H2/Ar plasmas for compound semiconductor etching-Reference-Cited by-同舟云学术

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Characterization of high density CH4/H2/Ar plasmas for compound semiconductor etching

Published:1999-05 Issue:3 Volume:17 Page:780-792
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Eddy C. R.,Leonhardt D.,Douglass S. R.,Shamamian V. A.,Thoms B. D.,Butler J. E.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.581695

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Kinetics of growth and plasma destruction of polymer films deposited in a glow discharge in methane;Russian Microelectronics;2016-03

2. Influence of the initial composition of a methane-argon mixture on the electricophysical parameters and plasma composition of DC glow discharge;High Temperature;2015-03

3. Kinetics and concentration of active particles in nonequilibrium low temperature methane plasma;High Temperature;2014-05

4. Dry Plasma Processing of Mercury Cadmium Telluride and Related II-VIs;Mercury Cadmium Telluride;2010-09-04

5. Inductively coupled plasma etching of HgCdTe using a CH4-based mixture;Journal of Electronic Materials;2005-06

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