Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference10 articles.
1. Room-temperature continuous-wave operation of 1.24-μm GaInNAs lasers grown by metal-organic chemical vapor deposition
2. Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers
3. Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer
4. High-performance strain-compensated InGaAs-GaAsP-GaAs (/spl lambda/=1.17 μm) quantum well diode lasers
5. Isolator-free 10 Gbit∕s singlemode fibre data transmission using 1.1 [micro sign]m GaInAs∕GaAs vertical cavity surface emitting laser
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