Room-temperature continuous-wave operation of 1.24-μm GaInNAs lasers grown by metal-organic chemical vapor deposition

Author:

Sato S.,Satoh S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

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3. High-power broad-area InGaNAs/GaAs quantum-well lasers in the 1200nm range;Microelectronics Reliability;2010-05

4. Broad-area InGaNAs/GaAs quantum-well lasers in the 1200 nm range;2009 59th Electronic Components and Technology Conference;2009-05

5. MOCVD-Grown Dilute Nitride Type II Quantum Wells;IEEE Journal of Selected Topics in Quantum Electronics;2008

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