Study of Laser Threshold Temperature Sensitivity in Optically Pumped GaN Epilayers-Reference-Cited by-同舟云学术

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Study of Laser Threshold Temperature Sensitivity in Optically Pumped GaN Epilayers

Published:2002-12-19 Issue:1 Volume: Page:479-482
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Ryabtsev A.G.¹,Lutsenko E.V.¹,Ryabtsev G.I.¹,Yablonskii G.P.¹,Smal A.S.²,Schineller B.³,Heuken M.³

Affiliation:

1. B. I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, F. Skaryna Ave. 68, 220072 Minsk, Belarus

2. Brest State Technical University, Moskovskaya Str. 267, 224017 Brest, Belarus

3. AIXTRON AG, Kackertstr. 15–17, 52072 Aachen, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390092

Reference8 articles.

1. Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors

2. The rate of radiative recombination in the nitride semiconductors and alloys

3. Moderate phonon dispersion shown by the temperature dependence of fundamental band gaps of various elemental and binary semiconductors including wide-band gap materials

4. Injection lasers

5. Study of the temperature variation of the output threshold of heterolasers based on GaSb/AlGaAsSb

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High excitation carrier density recombination dynamics of InGaN/GaN quantum well structures: Possible relevance to efficiency droop;Applied Physics Letters;2013-01-14

2. The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP;Semiconductors;2009-04

3. Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure;Semiconductors;2008-02

4. Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure;Applied Physics B;2008-01-22

5. Interband transition matrix element and temperature dependence of the lasing threshold for GaN laser structures;Journal of Applied Spectroscopy;2007-11

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