Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure-Reference-Cited by-同舟云学术

Optical parameters of diode lasers based on an InAsSb/InAsSbP heterostructure

Published:2008-02 Issue:2 Volume:42 Page:228-231
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Astakhova A. P.,Bez”yazychnaya T. V.,Burov L. I.,Gorbatsevich A. S.,Ryabtsev A. G.,Ryabtsev G. I.,Shchemelev M. A.,Yakovlev Yu. P.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782608020206.pdf

Reference24 articles.

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2. A. P. Danilova, A. N. Imenkova, N. M. Kolchanova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 1469 (1999) [Semiconductors 33, 1322 (1999)].

3. A. N. Imenkov, N. M. Kolchanova, P. Kubat, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 622 (2002) [Semiconductors 36, 592 (2002)].

4. A. P. Astakhova, T. N. Danilova, A. N. Imenkov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 985 (2003) [Semiconductors 37, 960 (2003)].

5. A. Joullie, P. Christol, A. N. Baranov, and A. Vicet, in Topics in Applied Physics: Solid-State Mid-Infrared Laser Sources (Springer, Berlin, 2003), Vol. 89, p. 1.

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