Cracks and dislocation structures in AlGaN systems-Reference-Cited by-同舟云学术

Cracks and dislocation structures in AlGaN systems

Published:2003-11-24 Issue:7 Volume: Page:2432-2435
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Maksimov I. L.¹²,Li H. D.¹,Sugahara T.¹,Tsukihara M.³,Mori A.⁴,Sakai S.³

Affiliation:

1. Satellite Venture Business Laboratory, The University of Tokushima, 2‐1 Minamijosanjima, Tokushima 770‐8506, Japan

2. Physics Faculty, Nizhny Novgorod University, 23 Gagarin Ave., Nizhny Novgorod 603000, Russia

3. Department of Electrical and Electronic Engineering, Faculty of Engineering, The University of Tokushima, 2‐1 Minamijosanjima, Tokushima 770‐8506, Japan

4. Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima, 2‐1 Minamijosanjima, Tokushima 770‐8506, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303308

Reference6 articles.

1. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes

2. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

3. Dislocation Reduction in GaN Epilayers Grown on a GaNP Buffer on Sapphire Substrate by Metalorganic Chemical Vapor Deposition

4. Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

5. Strain relaxation in AlGaN under tensile plane stress

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1. Growth of AlN and GaN by Metalorganic Chemical Vapor Deposition on BP Synthesized by Flux Method;Japanese Journal of Applied Physics;2007-03-30

2. Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD;physica status solidi (c);2006-03