Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference14 articles.
1. Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
2. Fe doping for making resistive GaN layers with low dislocation density; consequence on HEMTs
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4. AlGaN/AlN/GaN high-power microwave HEMT
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2. Influence of Fe in the buffer layer on the laser lift-off of AlGaN/GaN HEMT film: phenomena and mechanism;Semiconductor Science and Technology;2020-08-05
3. AlGaN/GaN/InGaN/GaN DH-HEMTs with GaN channel layer grown at high temperature;The European Physical Journal Applied Physics;2013-05
4. An internally-matched GaN HEMTs device with 45.2W at 8GHz for X-band application;Solid-State Electronics;2009-03
5. Al x Ga1-x N solar-blind photodetectors grown by low pressure MOCVD;Frontiers of Optoelectronics in China;2009-03
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