Lattice‐matched interface between GaN and ZrB 2-Reference-Cited by-同舟云学术

Lattice‐matched interface between GaN and ZrB 2

Published:2003-11-24 Issue:7 Volume: Page:2482-2485
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Iwata J.‐I.¹²,Siraishi K.¹³,Oshiyama A.¹³

Affiliation:

1. Research Consortium for Synthetic Nano‐Function Materials Project (SYNAF), National Institute of Advanced Industrial Science and Technology (AIST), 1‐1‐1 Umezono, Tsukuba 305‐8568, Japan

2. Nanothechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1‐1‐1 Umezono, Tsukuba 305‐8568, Japan

3. Institute of Physics, University of Tsukuba, 1‐1‐1 Tennodai, Tsukuba 305‐8571, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303300

Reference16 articles.

1. Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride

2. Heteroepitaxial growth of group-III nitrides on lattice-matched metal boride ZrB2 (0001) by molecular beam epitaxy

3. Atomic arrangement at the AlN/ZrB2 interface

4. Inhomogeneous Electron Gas

5. Self-Consistent Equations Including Exchange and Correlation Effects

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1. Electronic structures and mechanical properties of Al(111)/ZrB2(0001) heterojunctions from first-principles calculation;Molecular Physics;2015-02-20

2. First-Principle Studies on the Stability of AlN(0001)/NbB₂(0001) Interface;Advanced Materials Research;2014-10

3. Elastic and thermodynamic properties of ZrB2: First principle study;Physica B: Condensed Matter;2010-02

4. Pressure effects on elastic and thermodynamic properties of ZrB2;Journal of Materials Science;2009-08-15

5. Interface stabilization by Al in GaN and AlN epitaxies on NbB2(0001);Applied Physics Letters;2006-10-30