Interface stabilization by Al in GaN and AlN epitaxies on NbB2(0001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2384797
Reference24 articles.
1. III–nitrides: Growth, characterization, and properties
2. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
3. GaN Growth Using GaN Buffer Layer
4. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
5. Zirconium Diboride (0001) as an Electrically Conductive Lattice-Matched Substrate for Gallium Nitride
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. First-Principle Studies on the Stability of AlN(0001)/NbB2(0001) Interface;Advanced Materials Research;2014-10
2. Solid solution ranges of zirconium diboride with other refractory diborides: HfB2, TiB2, TaB2, NbB2, VB2 and CrB2;Journal of Alloys and Compounds;2009-05
3. Floating-zone growth of CrB2 single crystals;Journal of Alloys and Compounds;2008-04
4. Plasma-assisted molecular-beam epitaxy of GaN on transition-metal carbide (111) surfaces;Journal of Crystal Growth;2008-01
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