Atomic arrangement at the AlN/ZrB2 interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1516876
Reference9 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. III–V Nitrides—thermodynamics and crystal growth at high N2 pressure
3. Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition
4. Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
5. Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy
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