Growth of high-quality thick AlGaN by high-temperature metalorganic vapor phase epitaxy
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference3 articles.
1. Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
2. High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio
3. Thermodynamic Aspects of Growth of AlGaN by High-Temperature Metal Organic Vapor Phase Epitaxy
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3. High quality Al0.99Ga0.01N layers on sapphire substrates grown at 1150 °C by metalorganic vapor phase epitaxy;Japanese Journal of Applied Physics;2016-12-16
4. Microstructure Analysis of AlGaN on AlN Underlying Layers with Different Threading Dislocation Densities;Japanese Journal of Applied Physics;2013-08-01
5. AlGaN Metal–Semiconductor–Metal Photodetectors on Planar and Epitaxial Laterally Overgrown AlN/Sapphire Templates for the Ultraviolet C Spectral Region;Japanese Journal of Applied Physics;2013-08-01
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