InN layers grown by the HVPE-Reference-Cited by-同舟云学术

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InN layers grown by the HVPE

Published:2008-05 Issue:6 Volume:5 Page:1792-1794
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Syrkin A. L.,Ivantsov V.,Usikov A.,Dmitriev V. A.,Chambard G.,Ruterana P.,Davydov A. V.,Sundaresan S. G.,Lutsenko E.,Mudryi A. V.,Readinger E. D.,Chern-Metcalfe G. D.,Wraback M.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference4 articles.

1. Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates

2. Band gaps of InN and group III nitride alloys

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synthesis and characterization of InN nanocrystals on glass substrate by plasma assisted reactive evaporation;AIP Conference Proceedings;2017

2. Rare earth ion implantation and optical activation in nitride semiconductors for multicolor emission;Semiconductor Science and Technology;2015-03-05

3. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation;RSC Advances;2015

4. Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors;Japanese Journal of Applied Physics;2013-11-01

5. Low-Temperature Grown INN Films Based on Sapphire Substrate with ECR-Plasma Enhanced MOCVD;PRICM;2013-09-06

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