Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates-Reference-Cited by-同舟云学术

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Morphological, electrical, and optical properties of InN grown by hydride vapor phase epitaxy on sapphire and template substrates

Published:2006-06 Issue:11 Volume:99 Page:116103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Song D. Y.,Kuryatkov V.,Basavaraj M.,Rosenbladt D.,Nikishin S. A.,Holtz M.,Syrkin A. L.,Usikov A. S.,Ivantsov V. A.,Dmitriev V. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2201856

Reference28 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

3. Unusual properties of the fundamental band gap of InN

4. Optical bandgap energy of wurtzite InN

5. Effects of the narrow band gap on the properties of InN

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Photoluminescence Properties of Nanocomposite Thin Films Containing InN Quantum Dots Embedded in Si Matrix;ECS Journal of Solid State Science and Technology;2014

2. Epitaxial growth and interfaces of high-quality InN films grown on nitrided sapphire substrates;Journal of Materials Research;2013-04-16

3. Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration;Journal of Applied Physics;2009-03-15

4. X-Ray Diffraction and Photoluminescence Studies of InN Grown by Plasma-Assisted Molecular Beam Epitaxy with Low Free-Carrier Concentration;Journal of Electronic Materials;2009-01-09

5. Visible photoemission from InN;Applied Physics Letters;2008-08-25

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