Annealing studies of Si‐implanted Al 0.25 Ga 0.75 N
Author:
Affiliation:
1. Air Force Institute of Technology, 2950 Hobson Way, Wright Patterson AFB, OH 45433, USA
2. Air Force Research Laboratory, Wright Patterson AFB, OH 45433, USA
3. Air Force Office of Scientific Research, Arlington, VA 22203, USA
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303528
Reference7 articles.
1. Si doping of high-Al-mole fraction AlxGa1−xN alloys with rf plasma-induced molecular-beam-epitaxy
2. Optical investigation of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5
3. Electrical and structural analysis of high-dose Si implantation in GaN
4. Activation of silicon ion-implanted gallium nitride by furnace annealing
5. Electrical activation studies of GaN implanted with Si from low to high dose
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2. Temperature-Dependent Studies of Si-Implanted Al0.33Ga0.67N with Different Annealing Temperatures and Times;Journal of Electronic Materials;2009-09-26
3. Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1−x N with High Aluminum Mole Fraction;Journal of Electronic Materials;2008-10-08
4. Ferromagnetic Properties of Nickel-Implanted Al0.35Ga0.65N;Journal of the Korean Physical Society;2007-11-15
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