Optical investigation of MBE grown Si-doped AlxGa1−xN as a function of nominal Al mole fraction up to 0.5
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
2. Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation‐doped field‐effect transistors
3. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
4. High speed, low noise ultraviolet photodetectors based on GaN p-i-n and AlGaN(p)-GaN(i)-GaN(n)structures
5. Low noisep-π-nGaN ultraviolet photodetectors
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature-Dependent Studies of Si-Implanted Al0.33Ga0.67N with Different Annealing Temperatures and Times;Journal of Electronic Materials;2009-09-26
2. Ferromagnetic Properties of Nickel-Implanted Al0.35Ga0.65N;Journal of the Korean Physical Society;2007-11-15
3. Annealing studies of Si‐implanted Al 0.25 Ga 0.75 N;physica status solidi (c);2003-11-24
4. Deep level defects and doping in high Al mole fraction AlGaN;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2003
5. Electrical and optical investigation of MBE grown Si-doped AlxGa1−xN as a function of Al mole fraction up to 0.5;Materials Science and Engineering: B;2002-04
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