Growth of a‐plane AlN on r‐plane sapphire by plasma source molecular beam epitaxy
Author:
Affiliation:
1. Smart Sensor and Integrated Microsystems, Electrical & Computer Engineering Dept., Wayne State University, 5050 Anthony Wayne Drive Detroit, MI 48202, USA
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461601
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication of high-crystallinity a -plane AlN films grown on r -plane sapphire substrates by modulating buffer-layer growth temperature and thermal annealing conditions;Journal of Crystal Growth;2017-06
2. Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates;Applied Physics Express;2016-06-29
3. Crystal orientation variation of nonpolar AlN films with III/V ratio on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy;Electronic Materials Letters;2014-11
4. Growth and characterization of a-plane AlxGa1−xN alloys by metalorganic chemical vapor deposition;Journal of Crystal Growth;2010-03
5. In-plane structural anisotropy and polarized Raman-active mode studies of nonpolar AlN grown on 6H-SiC by low-pressure hydride vapor phase epitaxy;Journal of Crystal Growth;2010-02
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