Effects of AlN buffer layer thickness on the crystallinity and surface morphology of 10-µm-thicka-plane AlN films grown onr-plane sapphire substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/9/i=8/a=081001/pdf
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1. Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing;Journal of Applied Physics;2024-05-15
2. Improved crystallinity and surface morphology of a-plane AlN grown on high temperature annealed AlN/sapphire template by pulsed-flow mode metal-organic vapor phase epitaxy;Semiconductor Science and Technology;2023-05-05
3. The stacking fault annihilation in a-plane AlN during high-temperature annealing;CrystEngComm;2023
4. Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates;Semiconductor Science and Technology;2022-11-11
5. AlGaN Microfins as Nonpolar UV Emitters Probed by Time-Resolved Cathodoluminescence;ACS Photonics;2022-04-13
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